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| 2SK213, 2SK214, 2SK215, 2SK216 Silicon N Channel MOS FET REJ03G0903-0200 (Previous: ADE-208-1241) Rev.2.00 Sep 07, 2005 Application High frequency and low frequency power amplifier, high speed switching. Complementary pair with 2SJ76, J77, J78, J79 Features * * * * Suitable for direct mounting High forward transfer admittance Excellent frequency response Enhancement-mode Outline RENESAS Package code: PRSS0004AC-A (Package name: TO-220AB) D G 1. Gate 2. Source (Flange) 3. Drain S 1 2 3 Rev.2.00 Sep 07, 2005 page 1 of 5 2SK213, 2SK214, 2SK215, 2SK216 Absolute Maximum Ratings (Ta = 25C) Item Drain to source voltage 2SK213 2SK214 2SK215 2SK216 Gate to source voltage Drain current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Note: 1. Value at TC = 25C VGSS ID IDR Pch 1 Pch* Tch Tstg Symbol VDSX Ratings 140 160 180 200 15 500 500 1.75 30 150 -45 to +150 V mA mA W W Unit V C C Electrical Characteristics (Ta = 25C) Item Drain to source breakdown 2SK213 voltage 2SK214 2SK215 2SK216 Gate to source breakdown voltage Gate to source voltage Drain to source saturation voltage Forward transfer admittance Input capacitance Reverse transfer capacitance Note: 2. Pulse test Symbol V(BR)DSX Min 140 160 180 V(BR)GSS VGS(on) VDS(sat) |yfs| Ciss Crss 200 15 0.2 -- 20 -- -- Typ -- -- -- -- -- -- -- 40 90 2.2 Max -- -- -- -- -- 1.5 2.0 -- -- -- Unit V V V V V V V mS pF pF IG = 10 A, VDS = 0 ID = 10 mA, VDS = 10 V * 2 ID = 10 mA, VGD = 0 * ID = 10 mA, VDS = 20 V * ID = 10 mA, VDS = 10 V, f = 1 MHz 2 Test conditions ID = 1 mA, VGS = -2 V 2 Rev.2.00 Sep 07, 2005 page 2 of 5 2SK213, 2SK214, 2SK215, 2SK216 Main Characteristics Power vs. Temperature Derating 60 500 Typical Output Characteristics 3.5 TC = 25C 3.0 400 Channel Dissipation Pch (W) Drain Current ID (mA) 40 2.5 300 2.0 200 1.5 20 100 1.0 VGS = 0.5 V 4 8 12 16 20 0 50 100 150 0 Case Temperature TC (C) Drain to Source Voltage VDS (V) Typical Output Characteristics 50 Typical Transfer Characteristics 500 TC = 25C 0.8 VDS = 20 V Drain Current ID (mA) Drain Current ID (mA) 0.7 0.6 0.5 0.4 30 300 20 200 10 0.3 0.2 VGS = 0.1 V 100 0 20 40 60 80 100 0 1 TC 2 =- 40 400 25 C 25 75 3 4 5 Drain to Source Voltage VDS (V) Gate Source Voltage VGS (V) Forward Transfer Admittance vs. Drain Current 200 100 100 Drain Current ID (mA) 80 TC = -25 C 25 75 VDS = 20 V Forward Transfer Admittance yfs (mS) Typical Transfer Characteristics 50 60 20 10 5 TC = 25C VDS = 20 V 40 20 0 0.4 0.8 1.2 1.6 2.0 2 5 10 20 50 100 200 Gate Source Voltage VGS (V) Drain Current ID (mA) Rev.2.00 Sep 07, 2005 page 3 of 5 2SK213, 2SK214, 2SK215, 2SK216 Forward Transfer Admittance vs. Frequency Forward Transfer Admittance yfs (mS) 500 100 10 TC = 25C VDS = 20 V ID = 10 mA 1.0 0.1 0.05 5 k 10 k 100 k 1M 10 M 50 M Frequency f (HZ) Rev.2.00 Sep 07, 2005 page 4 of 5 2SK213, 2SK214, 2SK215, 2SK216 Package Dimensions JEITA Package Code SC-46 RENESAS Code PRSS0004AC-A Package Name TO-220AB / TO-220ABV MASS[Typ.] 1.8g Unit: mm 11.5 Max 2.79 0.2 10.16 0.2 9.5 8.0 3.6 +0.2 -0.1 +0.1 -0.08 4.44 0.2 1.26 0.15 6.4 18.5 0.5 15.0 0.3 1.27 2.7 Max 7.8 0.5 0.76 0.1 14.0 0.5 1.5 Max 2.54 0.5 2.54 0.5 0.5 0.1 Ordering Information Part Name 2SK213-E 2SK214-E 2SK215-E 2SK216-E 500 pcs 500 pcs 500 pcs 500 pcs Quantity Box (Sack) Box (Sack) Box (Sack) Box (Sack) Shipping Container Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product. Rev.2.00 Sep 07, 2005 page 5 of 5 Sales Strategic Planning Div. Keep safety first in your circuit designs! Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corp. product best suited to the customer's application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corp. or a third party. 2. Renesas Technology Corp. assumes no responsibility for any damage, or infringement of any third-party's rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or circuit application examples contained in these materials. 3. All information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of publication of these materials, and are subject to change by Renesas Technology Corp. without notice due to product improvements or other reasons. It is therefore recommended that customers contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor for the latest product information before purchasing a product listed herein. The information described here may contain technical inaccuracies or typographical errors. Renesas Technology Corp. assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or errors. Please also pay attention to information published by Renesas Technology Corp. by various means, including the Renesas Technology Corp. Semiconductor home page (http://www.renesas.com). 4. When using any or all of the information contained in these materials, including product data, diagrams, charts, programs, and algorithms, please be sure to evaluate all information as a total system before making a final decision on the applicability of the information and products. Renesas Technology Corp. assumes no responsibility for any damage, liability or other loss resulting from the information contained herein. 5. Renesas Technology Corp. semiconductors are not designed or manufactured for use in a device or system that is used under circumstances in which human life is potentially at stake. Please contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor when considering the use of a product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use. 6. The prior written approval of Renesas Technology Corp. is necessary to reprint or reproduce in whole or in part these materials. 7. If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and cannot be imported into a country other than the approved destination. Any diversion or reexport contrary to the export control laws and regulations of Japan and/or the country of destination is prohibited. 8. Please contact Renesas Technology Corp. for further details on these materials or the products contained therein. RENESAS SALES OFFICES Refer to "http://www.renesas.com/en/network" for the latest and detailed information. Renesas Technology America, Inc. 450 Holger Way, San Jose, CA 95134-1368, U.S.A Tel: <1> (408) 382-7500, Fax: <1> (408) 382-7501 Renesas Technology Europe Limited Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 5FH, U.K. Tel: <44> (1628) 585-100, Fax: <44> (1628) 585-900 Renesas Technology Hong Kong Ltd. 7th Floor, North Tower, World Finance Centre, Harbour City, 1 Canton Road, Tsimshatsui, Kowloon, Hong Kong Tel: <852> 2265-6688, Fax: <852> 2730-6071 Renesas Technology Taiwan Co., Ltd. 10th Floor, No.99, Fushing North Road, Taipei, Taiwan Tel: <886> (2) 2715-2888, Fax: <886> (2) 2713-2999 Renesas Technology (Shanghai) Co., Ltd. Unit2607 Ruijing Building, No.205 Maoming Road (S), Shanghai 200020, China Tel: <86> (21) 6472-1001, Fax: <86> (21) 6415-2952 Renesas Technology Singapore Pte. Ltd. 1 Harbour Front Avenue, #06-10, Keppel Bay Tower, Singapore 098632 Tel: <65> 6213-0200, Fax: <65> 6278-8001 Renesas Technology Korea Co., Ltd. Kukje Center Bldg. 18th Fl., 191, 2-ka, Hangang-ro, Yongsan-ku, Seoul 140-702, Korea Tel: <82> 2-796-3115, Fax: <82> 2-796-2145 http://www.renesas.com Renesas Technology Malaysia Sdn. Bhd. Unit 906, Block B, Menara Amcorp, Amcorp Trade Centre, No.18, Jalan Persiaran Barat, 46050 Petaling Jaya, Selangor Darul Ehsan, Malaysia Tel: <603> 7955-9390, Fax: <603> 7955-9510 (c) 2005. Renesas Technology Corp., All rights reserved. Printed in Japan. Colophon .3.0 |
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